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| AOP609 Complementary Enhancement Mode Field Effect Transistor General Description The AOP609 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AOP609 is Pbfree (meets ROHS & Sony 259 specifications). AOP609L is a Green Product ordering option. AOP609 and AOP609L are electrically identical. Features n-channel p-channel -60V VDS (V) = 60V ID = 4.7A (VGS=10V) -3.5A (VGS=-10V) RDS(ON) RDS(ON) < 60m (VGS=10V) < 115m (VGS =-10V) < 75m (VGS=4.5V) < 140m (VGS =-4.5V) ESD Rating: 1500V HBM 3000V HMB D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 D1 G2 S2 G1 S1 PDIP-8 n-channel p-channel Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 60 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Max p-channel -60 20 -3.5 -2.9 -20 2.5 1.6 -55 to 150 Typ 37 74 28 35 73 32 Units V V A VGS TA=25C TA=70C TA=25C TA=70C ID IDM PD 20 4.7 3.8 20 2.5 1.6 -55 to 150 Symbol RJA RJL RJA RJL Device n-ch n-ch n-ch p-ch p-ch p-ch W C TJ, TSTG Junction and Storage Temperature Range Thermal Characteristics: n-channel and p-channel Parameter t 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C A t 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C Max Units 50 C/W 90 C/W 40 C/W 50 90 40 C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AOP609 N Channel Electrical Characteristics (T =25C unless otherwise noted) J Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=3.0A Forward Transconductance VDS=5V, ID=4.7A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Conditions ID=250A, VGS=0V VDS=48V, VGS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=4.7A TJ=125C 1.5 20 2.4 49 65 57 17 0.78 Min 60 1 5 250 3 60 75 1 3.5 570 Typ Max Units V A A V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz 474 157 60 1.65 5.1 2.5 1 1.4 5.4 5.5 17.2 2.9 25.4 29.4 2 7 3 VGS=10V, VDS=30V, ID=4.7A VGS=10V, VDS=30V, RL=6, RGEN=3 IF=4.7A, dI/dt=100A/s IF=4.7A, dI/dt=100A/s 2 35 A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 1 : December 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOP609 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 30 10.0V 25 20 ID (A) 15 4.0V 10 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics VGS=3.5V 0 1 1.5 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 2.2 VGS=4.5V Normalized On-Resistance 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0 5 10 15 20 -50 -25 0 25 50 75 100 125 150 175 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=10V ID=4.7A ID(A) 5.0V 4.5V 10 VDS=5V 125C 15 25C 5 80 70 RDS(ON) (m) 60 50 40 30 20 VGS=10V VGS=4.5 ID=3A 160 140 120 100 80 25C 60 40 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 125 IS (A) ID=4.7A 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 25C 125C Alpha & Omega Semiconductor, Ltd. RDS(ON) (m) AOP609 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 10 VDS=30V ID= 4.7A Capacitance (pF) 600 Ciss 400 Coss 200 Crss 800 8 VGS (Volts) 6 4 2 0 0 3 4 5 Qg (nC) Figure 7: Gate-Charge Characteristics 1 2 6 0 30 40 50 VDS (Volts) Figure 8: Capacitance Characteristics 10 20 60 0 100.0 RDS(ON) limited 10.0 10ms 0.1s 1.0 TJ(Max)=150C TA=25C 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10s DC 1s 100s 1ms 10s 40 TJ(Max)=150C TA=25C 30 Power (W) ID (Amps) 20 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=50C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. AOP609 P-Channel Electrical Characteristics (T =25C unless otherwise noted) J Parameter Symbol STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=-4.5V, ID=-2.8A VDS=-5V, ID=-3.5A Forward Transconductance Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current Conditions ID=-250A, VGS=0V VDS=-48V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-10V, ID=-3.5A TJ=125C -1.5 -20 -1.8 95 133 112 9 -0.77 Min -60 -1 -5 100 -3 115 140 -1 -3.5 1080 Typ Max Units V A A V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate resistance Rg SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime Turn-On Rise Time tr tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge VGS=0V, VDS=-30V, f=1MHz VGS=0V, VDS=0V, f=1MHz 897 88 36 7.2 8.1 3.9 1.4 1.7 9 7.2 35 25.5 25.8 28.8 9 10 5 VGS=-10V, VDS=-30V, ID=-3.5A VGS=-10V, VDS=-30V, RL=8.1, RGEN=3 IF=-3.5A, dI/dt=100A/s IF=-3.5A, dI/dt=100A/s 2 35 A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any a given application depends on the user's specific board design. The current rating is based on the 10s thermal given application depends on the user's specific board design. The current rating is based on the t t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev1:Aug 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AOP609 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 30 25 20 -ID (A) 15 10 5 VGS=-3.0V 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 0 0 1 2 3 4 5 -VGS(Volts) Figure 2: Transfer Characteristics 2 Normalized On-Resistance VGS=-10V 1.8 1.6 1.4 1.2 1 0.8 0.6 80 0 2 4 6 8 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 200 180 160 RDS(ON) (m) 140 120 100 80 1.0E-05 60 2 3 4 5 6 7 8 9 10 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 125C ID=-3.5A 1.0E+01 1.0E+00 1.0E-01 -IS (A) 1.0E-02 1.0E-03 1.0E-04 25C 125C -50 -25 0 25 50 75 100 125 150 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=-4.5V ID=-2.8A ID=-3.5A VGS=-4.5V 110 RDS(ON) (m) -6.0V -5.0V -4.5V 9 -4.0V -ID(A) -10V 15 VDS=-5V 12 6 -3.5V 3 125C 25C 120 100 VGS=-10V 90 Alpha & Omega Semiconductor, Ltd. AOP609 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 10 8 -VGS (Volts) 6 4 2 200 0 0 2 4 6 8 10 -Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 10 20 30 40 50 60 -VDS (Volts) Figure 8: Capacitance Characteristics VDS=-30V ID=-3.5A Capacitance (pF) 1200 1000 800 600 400 Coss Crss Ciss 100.0 TJ(Max)=150C, TA=25C RDS(ON) limited 0.1s 1.0 1s 10s 0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 DC 10s Power (W) 1ms 10ms 100s 40 TJ(Max)=150C TA=25C 30 -ID (Amps) 10.0 20 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=50C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse PD 0.1 Ton Single Pulse 0.01 0.00001 T 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. |
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